The Effects of Impurities on Mass Transport and the Growth Mechanism of SiC Epitaxial Layers Grown by Sublimation
- 1 January 1992
- book chapter
- Published by Springer Nature
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Epitaxial growth of silicon carbide layers by sublimation „sandwich method”︁ (I) growth kinetics in vacuumCrystal Research and Technology, 1979