A high-gain monolithic D-band InP HEMT amplifier
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A three-stage monolithic amplifier has been developed which exhibits a measured small-signal gain of 30 dB at 140 GHz. The circuit employs 0.1-/spl mu/m AlInAs-GaInAs-InP HEMT devices with 150 /spl mu/m gate peripheries, and occupies a total area of 2 mm/sup 2/. Measured gain exceeds 10 dB from 129-157 GHz and 5 dB up to 184 GHz. This is the highest gain per stage ever reported in a transistor amplifier operating at these frequencies.Keywords
This publication has 7 references indexed in Scilit:
- InP-based HEMTs: status and potentialPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- W-band InP-based HEMT MMIC power amplifiers using finite-ground CPW designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 155-GHz monolithic InP-based HEMT amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Full-waveguide band, 90 to 140 GHz, MMIC amplifier modulePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/IEEE Microwave and Guided Wave Letters, 1995
- A 140-GHz monolithic low noise amplifierIEEE Microwave and Guided Wave Letters, 1995
- Characterization of asymmetric coplanar waveguide discontinuitiesIEEE Transactions on Microwave Theory and Techniques, 1993