New amorphous semiconductor: 2CdO⋅PbOx

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Abstract
A new amorphous semiconductor, 2CdO⋅PbOx (band gap: 1.58 eV), was found. Thin films of this material were prepared by rf sputtering of a Cd2PbO4 target in O2–Ar. The dc conductivity of the resulting amorphous thin films was ∼180 S cm−1 at 300 K and remained almost constant down to ∼4 K. The concentration of carrier electrons and the Hall mobility in the as‐deposited state were 1×1020 cm−3 and 9 cm2 V−1 s−1, respectively. When the as‐deposited specimens were heated to 250 °C, which is far below the crystallization (to Cd2PbO4) temperature (460 °C), the conductivity and the carrier concentration at 300 K became approximately twice as high. The thermal O2‐desorption measurements demonstrated that carrier electrons are generated via the formation of oxygen vacancies at the initial stage (2 from the amorphous structure. The effective mass of carrier electrons was estimated as 0.57m0.

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