Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
- 1 December 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (12B) , L1493
- https://doi.org/10.1143/jjap.37.l1493
Abstract
Sublattice reversal in III-V compound semiconductors grown on group-IV epitaxial layers on III-V substrates has been proposed for fabricating nonlinear optical devices with domain-inverted compound semiconductor structures. Sublattice reversal epitaxy is demonstrated in the GaAs/Si/GaAs (100) system and confirmed by reflection high energy electron diffraction, cross-sectional transmission electron microscopy, anisotropic etching, and optical second-harmonic generation measurements. The present sublattice reversal seems to be assisted by self annihilation of antiphase domains generated at GaAs/Si interfaces.Keywords
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