Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy

Abstract
Sublattice reversal in III-V compound semiconductors grown on group-IV epitaxial layers on III-V substrates has been proposed for fabricating nonlinear optical devices with domain-inverted compound semiconductor structures. Sublattice reversal epitaxy is demonstrated in the GaAs/Si/GaAs (100) system and confirmed by reflection high energy electron diffraction, cross-sectional transmission electron microscopy, anisotropic etching, and optical second-harmonic generation measurements. The present sublattice reversal seems to be assisted by self annihilation of antiphase domains generated at GaAs/Si interfaces.