Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 205-206
- https://doi.org/10.1109/islc.1994.519336
Abstract
Summary form only given. Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes were investigated for the first time. The lowest threshold current of 33 mA and the highest maximum operating temperature of 90/spl deg/C were achieved.Keywords
This publication has 2 references indexed in Scilit:
- Optical short pulse generation and data modulation by a single-chip InGaAsP tandem-integrated electroabsorption modulator (TEAM)Electronics Letters, 1993
- Electron reflectance of multiquantum barrier (MQB)Electronics Letters, 1986