Native defect properties in β-SiC: Ab initio and empirical potential calculations
- 1 June 2001
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 180 (1-4) , 286-292
- https://doi.org/10.1016/s0168-583x(01)00430-x
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- The primary damage state in fcc, bcc and hcp metals as seen in molecular dynamics simulationsPublished by Elsevier ,1999
- Development of bond-length alternation in very large carbon rings: LDA pseudopotential resultsPhysical Review B, 1998
- Antisites in silicon carbidePhysical Review B, 1998
- Radiation effects in silicon carbide: high energy cascades and damage accumulation at high temperatureJournal of Nuclear Materials, 1996
- LDA Predictions of C20 Isomerizations: Neutral and Charged SpeciesThe Journal of Physical Chemistry, 1996
- Molecular dynamics determination of defect energetics in beta -SiC using three representative empirical potentialsModelling and Simulation in Materials Science and Engineering, 1995
- Molecular dynamics computer simulations of displacement cascades in metalsJournal of Nuclear Materials, 1994
- Generalized norm-conserving pseudopotentialsPhysical Review B, 1989
- Formation energies, abundances, and the electronic structure of native defects in cubic SiCPhysical Review B, 1988
- Accurate spin-dependent electron liquid correlation energies for local spin density calculations: a critical analysisCanadian Journal of Physics, 1980