The plastic deformation of silicon between 300°C and 600°C
- 1 December 1981
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 44 (6) , 1407-1413
- https://doi.org/10.1080/01418618108235821
Abstract
Constant strain-rate compression of silicon single crystals has been performed under a hydrostatic pressure of 1500 MPa. The crystals were deformed at temperatures as low as 300°C and had resolved flow stress values of up to 1000 MPa. The variation of yield strength with temperature suggests a transition of the mechanism controlling the deformation near 600°C.Keywords
This publication has 6 references indexed in Scilit:
- Plastic deformation of MgO : n Al2O3 spinels at temperatures below 1000 °C (0.5 Tm)Le Journal de Physique Colloques, 1980
- Lüders bands in deformed silicon crystalsActa Metallurgica, 1979
- Dislocation dynamics in the plastic deformation of silicon crystals I. ExperimentsPhysica Status Solidi (a), 1978
- On the mobility of partial dislocations in siliconPhilosophical Magazine, 1977
- Deformation of silicon at low temperaturesJournal of Materials Science, 1974
- Macroscopic Plastic Properties of Dislocation-Free Germanium and Other Semiconductor Crystals. I. Yield BehaviorJournal of Applied Physics, 1963