Low resistivity aluminum nitride: carbon (AlN : C) films grown by metal organic chemical vapor deposition
- 31 March 1996
- journal article
- Published by Elsevier in Materials Letters
- Vol. 26 (4-5) , 223-226
- https://doi.org/10.1016/0167-577x(95)00225-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Ultraviolet electroluminescence in AlNApplied Physics Letters, 1976
- Epitaxially grown AlN and its optical band gapJournal of Applied Physics, 1973