Geometrical design of an alignment mark for focused ion beam implantation in GaAs using Monte Carlo simulation of ion trajectories

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Abstract
The geometrical features of an alignment mark for a precisely aligned focused ion beam (FIB) implantation in GaAs were studied. To optimize the shape etched on a GaAs wafer for various implantation conditions such as incident ion energy, beam diameter 2b, and ion species in addition to the sidewall angle θ and etched depth, intensity profiles of secondary electrons from the alignment mark were calculated by the Monte Carlo method. It was confirmed that the calculated results agreed with the experimental ones. The optimum depth dopt for an FIB alignment mark is given by dopt=2b tan θ regardless of the incident ion energy (80–200 keV) or the ion species (Si and Be). Fine pattern doping can be performed using this optimized mark.

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