Effect of auger recombination on the threshold characteristics of gain-guided InGaAsP lasers
- 10 November 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (23) , 974-976
- https://doi.org/10.1049/el:19830662
Abstract
Experimental and theoretical results are presented to study the effect of Auger recombination on the threshold current of gain-guided InGaAsP lasers. A comparison of theory and experiment suggests that Auger recombination should be included for a reasonable agreement between them. It is shown that a rapid increase of the threshold current for narrow stripes is due to the combined effect of index anti-guiding and Auger recombination. Our deduced values of the Auger coefficient at 1.3 and 1.55 μm indicate that it increases rapidly with decreasing bandgap.Keywords
This publication has 0 references indexed in Scilit: