Chemical Vapor Deposition of Molybdenum Silicide
- 1 July 1988
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 135 (7) , 1752-1757
- https://doi.org/10.1149/1.2096113
Abstract
A cold‐wall reactor has been used to deposit molybdenum silicide films from a mixture of and . The composition of the resulting films can be controlled by the deposition temperature, and stoichiometry is obtained with a substrate temperature of 200°C. The film composition is independent of reactant gas ratios in the range of 1–10. The as‐deposited films are generally amorphous as determined by x‐ray analysis. Annealing at 950°C in argon converts the films to tetragonal polycrystalline .Keywords
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