Deflector for a deflection‐modulated EBS amplifier
- 1 January 1984
- journal article
- research article
- Published by Wiley in Electronics and Communications in Japan (Part I: Communications)
- Vol. 67 (4) , 102-109
- https://doi.org/10.1002/ecja.4400670413
Abstract
The deflection‐modulated EBS amplifier operating at microwave frequencies requires a deflector working effectively in the frequency band. the relation between the structure of a meander line and its deflection sensitivity, frequency response, and a new type of the support were investigated; thus a deflector for a 4‐GHz deflection‐modulated EBS amplifier was manufactured. A formula has been derived for the deflection, and it is found that the deflection sensitivity is maximized at a certain ratio of the finger gap to the finger pitch of the meander line. When this ratio is increased, the variation of the deflection sensitivity over a given frequency band is reduced. We proposed a quarter‐wave strip line to support the meander line; it is confirmed experimentally that its quality is almost equivalent to the conventional ceramic spacer.Keywords
This publication has 4 references indexed in Scilit:
- Electron-Bombarded Semiconductor DevicesPublished by Elsevier ,1978
- Electron bombarded semiconductor devicesProceedings of the IEEE, 1974
- A new type of traveling-wave deflection systemIEEE Transactions on Electron Devices, 1972
- A Broad-Band Interdigital Circuit for Use in Traveling-Wave-Type AmplifiersProceedings of the IRE, 1952