Erbium-doped phosphosilicate glass waveguide amplifier fabricated by PECVD
- 21 January 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (2) , 139-141
- https://doi.org/10.1049/el:19930094
Abstract
An Er-doped waveguide amplifier fabricated by plasma enhanced chemical vapour deposition is described. A maximum net gain of 5 dB and a gain coefficient of 0.67 dB/cm are obtained in a 0.48 wt% Er-doped waveguide pumped at 420 mW at a wavelength of 0.98 μm. The 0 dB gain threshold is 23 mW.Keywords
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