Crystallization behavior of sol-gel derived Pb(Zr,Ti)O3 thin films and the polarization switching effect on film microstructure
- 12 December 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (24) , 3140-3142
- https://doi.org/10.1063/1.112461
Abstract
The microstructure of sol-gel derived Pb(Zr,Ti)O3 thin films was investigated using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). The AES depth profile revealed that the Ti content decreases and the Zr content increases from the bottom through the thickness as a result of the crystallization into perovskite phase. A cross-sectional TEM micrograph showed that the PZT grains are columnar and grow epitaxially from the bottom to the surface. It was also shown that the 2.5-nm-thick interface layer appeared at the top Au electrode-PZT interface after 108 polarization switching cycles, while there was no change at the bottom Pt-PZT interface.Keywords
This publication has 4 references indexed in Scilit:
- Electric Fatigue in Lead Zirconate Titanate CeramicsJournal of the American Ceramic Society, 1994
- Ferroelectric Properties of Sol-Gel Derived Pb(Zr, Ti)O3 Thin FilmsJapanese Journal of Applied Physics, 1993
- Highly Oriented, Chemically Prepared Pb(Zr, Ti)O3 Thin FilmsJournal of the American Ceramic Society, 1993
- Quantitative measurement of space-charge effects in lead zirconate-titanate memoriesJournal of Applied Physics, 1991