140 GHz 70 mW CW output power with n -type silicon single-drift impatt diodes
- 27 October 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (22) , 908-909
- https://doi.org/10.1049/el:19830620
Abstract
Silicon single-drift-region impatt diodes designed to operate at D-band frequencies were fabricated with a p+nn+ structure formed by thermal diffusion of boron. A continuous-wave output power of 70 mW at 137 GHz with a conversion efficiency of 3.2% was obtained. The diodes were packaged with a quartz standoff configuration on a copper heatsink and mounted into a cap-type waveguide resonator.Keywords
This publication has 0 references indexed in Scilit: