High-performance InP/Ga0.47In0.53As/InP metal-semiconductor-metal photodetectors with a strained Al0.1In0.9P barrier enhancement layer
- 18 September 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (12) , 1715-1717
- https://doi.org/10.1063/1.115026
Abstract
A reduction in the dark current and an enhancement of the breakdown voltage have been observed in interdigitated InP/Ga0.47In0.53As/InP metal‐semiconductor‐metal photodetectors when a cap layer of Al0.1In0.9P was grown on the epitaxial structure to increase the Schottky barrier. The devices had a dc responsivity of 0.32 A/W and an intrinsic response faster than 74 ps.Keywords
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