Design and Performance of Low Noise C -and X - Band GaAs FET Mixers
- 1 October 1977
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Different configurations of MESFET mixers are compared in the 6 GHz band for intermediate frequencies ranging from 30 MHz to 1.5 GHz. Conversion gain of 10 dB associated with 4 dB SSB noise figure have been achieved. Results will be presented concerning a balanced module made up of two such mixers, image termination effect, cooling and the influence of 1/f noise. At 12 GHz, preliminary results obtained are 3.5 dB conversion gain and a 7.5 dB SSB noise figure.Keywords
This publication has 4 references indexed in Scilit:
- FET Mixers for Communication Satellite TranspondersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- GaAs f.e.t. mixer operation with high intermediate frequenciesElectronics Letters, 1976
- Microwave MESFET MixerIEEE Transactions on Microwave Theory and Techniques, 1976
- Integrated GaAs f.e.t. mixer performance at X bandElectronics Letters, 1975