A new GaAs on Si structure using AlAs buffer layers grown by atomic layer epitaxy
- 1 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 346-351
- https://doi.org/10.1016/0022-0248(90)90541-r
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Dislocation-density studies in MOCVD GaAs on Si substratesJournal of Crystal Growth, 1988
- Kinetic processes in atomic-layer epitaxy of GaAs and AlAs using a pulsed vapor-phase methodJournal of Vacuum Science & Technology B, 1987
- Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam EpilaxyJapanese Journal of Applied Physics, 1987
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987