Surface Preparation to Obtain Good I-V Characteristics on Germanium Lithium Diodes

1 June 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 15 (3) , 352-358
https://doi.org/10.1109/TNS.1968.4324958

Abstract

High voltage breakdown low current diodes have been made by the simple and reproducible process of quenching the final H202-HF etch of the diode with an acqueous salt solution. Of those salts tried CaCl2 gives the best overall performance. Planar diodes 28 mm diameter and 5 mm drift depth have been made with leakage currents < 5×10-10 A for fields up to 600 V/mm. The diode surface noise on these units was less than 0.3 keV. The surface treatment also gives some surface passivation.

Keywords

GERMANIUM
LITHIUM
DIODES
LEAKAGE CURRENT
SURFACE TREATMENT
ETCHING
LOW VOLTAGE
NOISE FIGURE
SURFACE FITTING
TELEPHONY

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