Impact ionization in silicon
- 21 June 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (25) , 3339-3341
- https://doi.org/10.1063/1.109064
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Direct determination of impact-ionization rates near threshold in semiconductors using soft-x-ray photoemissionPhysical Review Letters, 1992
- A novel approach for including band-structure effects in a Monte Carlo simulation of electron transport in siliconJournal of Applied Physics, 1991
- Soft-x-ray–induced core-level photoemission as a probe of hot-electron dynamics inPhysical Review Letters, 1990
- Electron transport and impact ionization in SiPhysical Review B, 1990
- Impact ionization of electrons in silicon (steady state)Journal of Applied Physics, 1983
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Electron and hole ionization rates in epitaxial silicon at high electric fieldsSolid-State Electronics, 1973
- Use of a Schottky barrier to measure impact ionization coefficients in semiconductorsSolid-State Electronics, 1973
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961