Electroluminescence of AlAs/GaAs Disordered Superlattices
- 1 September 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (9A) , L1588-1590
- https://doi.org/10.1143/jjap.29.l1588
Abstract
The double hetero (DH)-structure pin diode in which an undoped AlAs/GaAs disordered superlattice is used for the active layer is fabricated, and electroluminescence (EL) from the diode is measured at room temperature. The DH-structure pin diode whose active layer is either Al0.5Ga0.5As bulk alloy or (AlAs)2(GaAs)2 ordered superlattice is also fabricated for the comparison of EL. The EL intensity from the disordered superlattice is 2.5 and 10 times stronger than those from the last two diodes, respectively, and the EL peak energy of 1.88 eV from the disordered superlattice is lower than those from the other two diodes, i.e., the red shift.Keywords
This publication has 2 references indexed in Scilit:
- Absorption Spectra and Photoluminescent Processes of AlAs/GaAs Disordered SuperlatticesJapanese Journal of Applied Physics, 1990
- Proposal and Experimental Results of Disordered Crystalline SemiconductorsJapanese Journal of Applied Physics, 1989