A High Gain, Monolithic Distributed Amplifier Using Cascode Active Elements
- 1 January 1986
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 86, 23-26
- https://doi.org/10.1109/mcs.1986.1114473
Abstract
A novel, monolithic, distributed amplifier has achieved a record gain of over 10 dB from 2-18 GHz. The design utilizes five quarter-micron gate length, cascode connected, FETs on epitaxial material . Circuit simulations predict over 10 dB gain from 2-30 GHz for an amplifier with seven active elements. Novel features of the design, fabrication and testing are discussed.Keywords
This publication has 2 references indexed in Scilit:
- A 2--18--GHz Monolithic Distributed Amplifier Using Dual-Gate GaAs FET'sIEEE Transactions on Microwave Theory and Techniques, 1984
- Distributed cascode amplifier and noise figure modeling of an arbitrary amplifier configurationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984