Microcrystalline Si: H Film and Its Application to Solar Cells
- 1 September 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (9A) , L586-588
- https://doi.org/10.1143/jjap.21.l586
Abstract
The photovoltaic performance of a new type amorphous silicon solar cell with ITO/n-i-p/ss solar cell in which phosphorus-doped microcrystalline (µc) Si: H is applied as the window-side layer is described in conjunction with the optical properties of the µc-Si: H film. By applying this film, the short-circuit current in the cell is improved over 10% in comparison with that of a conventional ITO/n-i-p/ss cell. This improvement is explained by the high transparency of the µc-Si: H and by a new concept of “double AR effect” of the crystallized window-side layer which reduces the surface reflectance.Keywords
This publication has 3 references indexed in Scilit:
- PROPERTIES OF MICROCRYSTALLINE P-DOPED GLOW DISCHARGE Si:H FILMSLe Journal de Physique Colloques, 1981
- Boron Doping of Hydrogenated Silicon Thin FilmsJapanese Journal of Applied Physics, 1981
- Low-temperature crystallization of doped a-Si:H alloysApplied Physics Letters, 1980