A new empirical nonlinear model for HEMT and MESFET devices
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 40 (12) , 2258-2266
- https://doi.org/10.1109/22.179888
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- A balanced millimeter wave doubler based on pseudomorphic HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Modeling MESFETs for intermodulation analysis of mixers and amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Characteristics of a millimeter wave drain mixerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Analytic solution of the velocity-saturated MOSFET/MODFET wave equation and its application to the prediction of the microwave characteristics of MODFETsIEEE Transactions on Electron Devices, 1990
- A GaAs MESFET Mixer with Very Low IntermodulationIEEE Transactions on Microwave Theory and Techniques, 1987
- GaAs FET device and circuit simulation in SPICEIEEE Transactions on Electron Devices, 1987
- A gate probe method of determining parasitic resistance in MESFET'sIEEE Electron Device Letters, 1986
- A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1985
- Computer Calculation of Large-Signal GaAs FET Amplifier CharacteristicsIEEE Transactions on Microwave Theory and Techniques, 1985
- GaAs FET large-signal model and its application to circuit designsIEEE Transactions on Electron Devices, 1981