Synchrotron X-Ray Diffraction Study of Silicon during Pulsed-Laser Annealing
- 1 February 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 48 (5) , 337-340
- https://doi.org/10.1103/physrevlett.48.337
Abstract
Time-resolved x-ray diffraction measurements of lattice strain in silicon during pulsed-laser annealing have been made with nanosecond resolution by using synchrotron radiation. Analyses of the strain in pure and boron-implanted silicon in terms of temperature indicate high temperatures and evidence for near-surface melting, in qualitative agreement with the melting model of laser annealing.Keywords
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