1/ƒ noise in diffused and ion-implanted MOS capacitors
- 31 October 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (10) , 1009-1016
- https://doi.org/10.1016/0038-1101(83)90078-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- 1/f noise in gate-controlled implanted resistorsJournal of Applied Physics, 1981
- Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFETIEEE Transactions on Electron Devices, 1979
- Discussion of recent experiments on 1/ƒ noisePhysica, 1972