Trapped-hole defects in SrO
- 15 December 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 14 (12) , 5466-5472
- https://doi.org/10.1103/physrevb.14.5466
Abstract
We report the successful production of and defects in SrO. Since hydrogen has been found to be necessary for formation in MgO, SrO single crystals were intentionally doped with hydrogen during growth. Both these defects were detected after a short irradiation at 77 K in crystals previously irradiated with high doses of either neutrons, electrons, or rays. Electron-paramagnetic-resonance (EPR) measurements showed that the center exhibits axial symmetry at 77 K characterized by and . At 270 K, the EPR spectrum consists of a single thermally-averaged isotropic line at . An extensive electron-nuclear double-resonance search at 4.2 K revealed no charge-compensating impurities associated with this center. The center also displays axial symmetry at 77 K with the following parameters: , , , and . The absence of signals at 4.2 K established that the triplet state is an excited state. At ∼ 210 K, the centers begin to decay into the more stable center. The latter has a room-temperature half-life of ∼ 25 min. Additional defects are also reported. In particular an axial center is tentatively identified as an molecular ion oriented along directions.
Keywords
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