Trapped-hole defects in SrO

Abstract
We report the successful production of V and V0 defects in SrO. Since hydrogen has been found to be necessary for V formation in MgO, SrO single crystals were intentionally doped with hydrogen during growth. Both these defects were detected after a short γ irradiation at 77 K in crystals previously irradiated with high doses of either neutrons, electrons, or γ rays. Electron-paramagnetic-resonance (EPR) measurements showed that the V center exhibits 100 axial symmetry at 77 K characterized by g=2.0013(2) and g=2.0705(2). At 270 K, the EPR spectrum consists of a single thermally-averaged isotropic line at g=2.047(1). An extensive electron-nuclear double-resonance search at 4.2 K revealed no charge-compensating impurities associated with this center. The V0 center also displays 100 axial symmetry at 77 K with the following parameters: S=1, g=2.0012(2), g=2.0748(2), and D=127.05(5)×104 cm1. The absence of V0 signals at 4.2 K established that the S=1 triplet state is an excited state. At ∼ 210 K, the V0 centers begin to decay into the more stable V center. The latter has a room-temperature half-life of ∼ 25 min. Additional defects are also reported. In particular an S=I=12 axial center is tentatively identified as an (OF)2 molecular ion oriented along 111 directions.

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