Structure of GaAs heteroepitaxial layer grown on GaP(001) by molecular beam epitaxy
- 1 February 1991
- journal article
- Published by Elsevier in Surface Science
- Vol. 242 (1-3) , 166-170
- https://doi.org/10.1016/0039-6028(91)90261-p
Abstract
No abstract availableKeywords
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