Low-compensated boron-doped homoepitaxial diamond films
- 31 May 2000
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 9 (3-6) , 956-959
- https://doi.org/10.1016/s0925-9635(99)00212-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Homoepitaxial diamond film with an atomically flat surface over a large areaDiamond and Related Materials, 1999
- High quality homoepitaxial diamond thin film synthesis with high growth rate by a two-step growth methodDiamond and Related Materials, 1999
- High-Quality B-Doped Homoepitaxial Diamond Films using TrimethylboronJapanese Journal of Applied Physics, 1998
- Diamond films epitaxially grown by step-flow modeJournal of Crystal Growth, 1998
- Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond filmsJournal of Applied Physics, 1997
- Ohmic contacts to semiconducting diamond using a Ti/Pt/Au trilayer metallization schemeDiamond and Related Materials, 1996
- Origin of High-Conductivity Layer Near the Surface in As-Grown Diamond FilmsMRS Proceedings, 1996
- Electrical Properties of Diamond for Device ApplicationsMRS Proceedings, 1995
- Boron incorporation effects in CVD diamond film growthVacuum, 1994
- Comparison of electronic transport in boron-doped homoepitaxial, polycrystalline, and natural single-crystal diamondApplied Physics Letters, 1993