Growth and luminescence properties of GaSb single crystals
- 1 September 1985
- journal article
- condensed matter
- Published by Springer Nature in Acta Physica Hungarica
- Vol. 57 (3-4) , 303-308
- https://doi.org/10.1007/bf03158901
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Low dislocation density GaSb single crystals grown by LEC techniqueJournal of Crystal Growth, 1982
- Direct synthesis and crystallization of GaSbJournal of Crystal Growth, 1981
- InAs-GaSb superlattices-synthesized semiconductors and semimetalsJournal of Crystal Growth, 1981
- Ga1-xAlxSb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficientsIEEE Journal of Quantum Electronics, 1981
- Temperature Dependence of the Threshold Current of AlGaAsSb/GaSb DH LasersJapanese Journal of Applied Physics, 1980
- GaSb and InSb crystals grown by vertical and horizontal travelling heater methodJournal of Crystal Growth, 1979
- Observations of microfacets near irregularly remelted surfaces in pulled GaSb crystalsJournal of Crystal Growth, 1978
- Wavy Impurity Patterns beside the Twin Boundary in Pulled GaSb CrystalsJapanese Journal of Applied Physics, 1977
- Coherent Gunn oscillations in Ga x in 1−x SbElectronics Letters, 1976
- GaSb Prepared from Nonstoichiometric MeltsJournal of the Electrochemical Society, 1966