Enhanced optical properties in porous silicon microcavities

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Abstract
We report the experimental investigation of the optical properties of porous silicon embedded in a planar microcavity structure in which both the active layer and the two Bragg reflectors are fabricated by electrochemical processing of a p-type porous silicon wafer. By tuning the cavity resonance energy around the maximum of the porous silicon emission we have observed photoluminescence linewidths as narrow as 18–25 meV and an intensity enhancement of more than one order of magnitude. The experimental results are clarified by theoretical calculations performed with the standard transfer-matrix approach in the framework of a porous silicon quantum-box model.

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