Comparison of 300-, 600-, and 1200-V n-channel insulated gate transistors

1 April 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (4) , 161-163
https://doi.org/10.1109/EDL.1985.26082

Abstract

The performance of insulated gate transistors with 300-, 600-, and 1200-V ratings were experimentally investigated. A comparison of several device characteristics, such as forward conduction, forward drop versus turn-off time tradeoff, and the dependence of turn-off time and leakage current upon electron irradiation dosage, is provided.

Keywords

INSULATION
CURRENT DENSITY
ELECTRONS
MOSFET CIRCUITS
DOPING
BIPOLAR TRANSISTORS
POWER MOSFET
CONDUCTIVITY
THRESHOLD VOLTAGE
LEAKAGE CURRENT

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