High-voltage high-power gate-assisted turn-off thyristor for high-frequency use
- 1 August 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (8) , 883-887
- https://doi.org/10.1109/t-ed.1976.18503
Abstract
The fast switching thyristor with an integrated rectifier-diode connected in antiparallel to the cathode-emitter junction of auxiliary thyristor has been made. This thyristor has the ratings of blocking voltage 1200 V, average current 400 A. The turn-off time of less than 6 µs can be obtained by applying -10 V gate bias. It has the interdigitated gate structure and the high-frequency current rating more than 500 A at 10 kHz.Keywords
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