Reversible degradation effects in GaSb tunnel diodes
- 31 August 1962
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 5 (4) , 261-263
- https://doi.org/10.1016/0038-1101(62)90106-5
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Peak Current Behavior in Ge Esaki JunctionsJournal of Applied Physics, 1962