Angular dependence of the ion-induced secondary-electron yield from solids
- 1 October 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 24 (7) , 3749-3755
- https://doi.org/10.1103/physrevb.24.3749
Abstract
The secondary-electron yield from polycrystalline copper induced by protons, noble-gas ions, and copper ions has been studied as a function of angle of ion incidence in the range 0° to 85°. The experimental results are explained in terms of a recently developed theory for secondary-electron emission. The kinetic emission of electrons is regarded as consisting of two parts which exhibit different dependences on the angle of ion incidence. Good agreement is found between theory and experiment.Keywords
This publication has 9 references indexed in Scilit:
- Ion induced electron emission from polycrystalline copperNuclear Instruments and Methods in Physics Research, 1981
- Transport theory for kinetic emission of secondary electrons from solidsPhysical Review B, 1980
- Direct and recoil-induced electron emission from ion-bombarded solidsPhysical Review B, 1979
- The angular dependence of the sputter yield maximaRadiation Effects, 1976
- Ion Implantation Range and Energy Deposition DistributionsPublished by Springer Nature ,1975
- Ultra high vacuum system for ion-solid collision investigations connected to a conventional ion acceleratorNuclear Instruments and Methods, 1972
- Three-Parameter Formula for the Electronic Stopping Cross Section at Nonrelativistic VelocitiesPhysical Review A, 1972
- A study of the production and removal of radiation defects in Ge using secondary electron emissionRadiation Effects, 1972
- The dependence of the sputtering ratio of polycrystalline metals on the angle of ion incidence on the targetCanadian Journal of Physics, 1968