640 mV open-circuit voltage multicrystalline silicon solar cells: role of base doping on device parameters
- 31 January 1995
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 36 (1) , 99-105
- https://doi.org/10.1016/0927-0248(94)00161-k
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Gettering and hydrogen passivation of edge-defined film-fed grown multicrystalline silicon solar cells by Al diffusion and forming gas annealApplied Physics Letters, 1994
- Front surface passivation of silicon solar cells with antireflection coatingJournal of Applied Physics, 1987
- High efficiency polycrystalline silicon solar cells using phosphorus pretreatmentApplied Physics Letters, 1986
- 20% efficiency silicon solar cellsApplied Physics Letters, 1986
- Towards high efficiency polycrystalline silicon solar cellsSolar Cells, 1984
- 19.1% efficient silicon solar cellApplied Physics Letters, 1984
- High-efficiency ion-implanted silicon solar cellsIEEE Transactions on Electron Devices, 1984