Thermal Annealing Effect of AlAs-GaAs Superlattice Grown at 300°C by Migration-Enhanced Epitaxy
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A) , L2015
- https://doi.org/10.1143/jjap.27.l2015
Abstract
AlAs-GaAs superlattices are grown at 300°C on (100) GaAs substrates by migration-enhanced epitaxy at various As4 deposition rates. They are then annealed at temperatures higher than the growth temperature. Superlattices grown at closely optimized As4 deposition rates are unaffected by thermal annealing at temperatures as high as 800°C. After annealing, no change is observed in photoluminescence linewidth, and only slight changes are observed in its efficiency and emission energy.Keywords
This publication has 6 references indexed in Scilit:
- Migration-Enhanced Epitaxy of GaAs and AlGaAsJapanese Journal of Applied Physics, 1988
- Photoluminescence characteristics of AlGaAs-GaAs single quantum wells grown by migration-enhanced epitaxy at 300 °C substrate temperatureApplied Physics Letters, 1987
- Effects of dielectric encapsulation and As overpressure on Al-Ga interdiffusion in AlxGa1−x As-GaAs quantum-well heterostructuresJournal of Applied Physics, 1987
- Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs SuperlatticesJapanese Journal of Applied Physics, 1985
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975