A comprehensive study of fully-silicided gates to achieve wide-range work function differences (0.91 eV) for high-performance CMOS devices
- 27 July 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
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- Dual workfunction Ni-silicide/HfSiON gate stacks by phase-controlled full-sificidation (PC-FUSI) technique for 45nm-node LSTP and LOP devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005