IRE Standards on Solid-State Devices: Measurement of Minority-Carrier Lifetime in Germanium and Silicon by the Method of Photoconductive Decay
- 1 January 1961
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 49 (8) , 1292-1299
- https://doi.org/10.1109/jrproc.1961.287921
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- IRE Standards on Solid-State Devices: Definitions of Semiconductor Terms, 1960Proceedings of the IRE, 1960
- Recombination in SemiconductorsProceedings of the IRE, 1958
- Resistivity Measurements on Germanium for TransistorsProceedings of the IRE, 1954