Pseudopotential calculation of the stacking fault energy in silicon
- 1 January 1974
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 29 (1) , 1-8
- https://doi.org/10.1080/14786437408213549
Abstract
A calculation of the intrinsic stacking fault energy in silicon has been carried out to second order perturbation in the pseudopotential formalism. The calculated result is 55 erg/cm2, which is in remarkably good agreement with the experimental value.Keywords
This publication has 16 references indexed in Scilit:
- Extended dislocations in germaniumPhilosophical Magazine, 1973
- The Fitting of Pseudopotentials to Experimental Data and Their Subsequent ApplicationPublished by Elsevier ,1970
- The Pseudopotential ConceptPublished by Elsevier ,1970
- Investigations of dislocation strain fields using weak beamsPhilosophical Magazine, 1969
- Electronic band structure and covalency in diamond-type semiconductorsJournal of Physics C: Solid State Physics, 1969
- Electronic Structure and Optical Properties of Si, Ge, and SnPhysical Review B, 1969
- Silicon as a free electron metalPhysica, 1965
- Electronic Band Structure of Arsenic. I. Pseudopotential ApproachPhysical Review B, 1965
- A new method for the electronic structure of metalsPhilosophical Magazine, 1964
- Stacking Fault Energy in SiliconJournal of Applied Physics, 1962