Room-temperature operation of lattice-matched InP/Ga0.47In0.53As/InP double-heterostructure lasers grown by MBE
- 1 July 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (1) , 44-47
- https://doi.org/10.1063/1.90186
Abstract
Molecular beam epitaxial(MBE)growth of InP/Ga0.47In0.53As/InP double heterostructures has resulted in pulsed room‐temperature lasing at 1.65 μm. Thresholds as low as 3.2 kA/cm2 for a 0.6‐μm‐thick layer has been achieved. These results were achieved by ’’premixing’’ the Ga and In together in a common source oven and precisely monitoring the Ga/In flux ratio during the growth of the Ga0.47In0.53As layer. Cd diffusion from a vapor source allowed us to pdope the top InP layer in the as‐grown MBE wafer.Keywords
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