Surface Cleaning of GaSb (100) Substrates for Molecular-Beam Epitaxy
- 1 December 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (12R)
- https://doi.org/10.1143/jjap.23.1657
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Room Temperature Operation of Al0.17Ga0.83Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1984
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- Electronic Properties of (100) Surfaces of GaSb and InAs and Their Alloys with GaAsIBM Journal of Research and Development, 1978
- Dependence of residual damage on temperature during Ar+ sputter cleaning of siliconJournal of Applied Physics, 1977
- Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eVJournal of Electron Spectroscopy and Related Phenomena, 1976