Radiation Effects on Bipolar Integrated Injection Logic
- 1 December 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 22 (6) , 2605-2610
- https://doi.org/10.1109/tns.1975.4328176
Abstract
Integrated Injection Logic (I2 L) is a new highdensity, low power bipolar LSI technology that offers major performance advantages over other bipolar and MOS/LSI technologies. Results are presented on the experimentally-determined radiation sus ceptibility of developmental unhardened I2L LSI logic cells in terms of neutron-induced displacement damage, ionizing - dose-induced surface effects and transient photoresponse.Keywords
This publication has 3 references indexed in Scilit:
- Gamma radiation effects on integrated injection logic cellsIEEE Transactions on Electron Devices, 1975
- Integrated injection logic-present and futureIEEE Journal of Solid-State Circuits, 1974
- Merged-transistor logic (MTL)-a low-cost bipolar logic conceptIEEE Journal of Solid-State Circuits, 1972