The Use of Selective Annealing for Growing Very Large Grains in Silicon on Insulator Films
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (S1)
- https://doi.org/10.7567/jjaps.22s1.205
Abstract
The selective annealing technique (laser annealing under patterned antireflecting coating) has been successfully applied to the growth of very large (20 µm × 3000 µm) silicon single crystals. The grain boundary location is controlled by a conventional lithography step, and the grains obtained have a nearly perfect rectangular shape.Keywords
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