Abstract
Photoionization cross sections, oscillator strengths and energy levels of the silicon-like ions, Si0, S2+, Ar4 and Ca6+ are calculated in the close coupling approximation using the R-matrix method. A large number of bound states with n<or=10 have been considered and oscillator strengths for transitions among all these states and photoionization cross sections of all the bound states are obtained. Partial photoionization cross sections of the ground state into various excited states of the residual ion are also obtained for each ion. Detailed comparisons have been made for the calculated energies, oscillator strengths and photoionization cross sections with available theoretical and experimental values.

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