Dopant profile control and metrology requirements for sub-0.5 μm metal–oxide–semiconductor field-effect transistors
- 1 January 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (1) , 218-223
- https://doi.org/10.1116/1.589032
Abstract
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