Sintered n-CuInSe2/Au Schottky diode
- 1 May 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (9) , 853-855
- https://doi.org/10.1063/1.95862
Abstract
Rectifying CuInSe2/Au contacts were prepared by a vacuum evaporation of Au on n‐type sintered CuInSe2 samples in order to evaluate the electro‐optical properties of these devices. The low photovoltaic efficiency of the diode is due to the presence of the insulating layer, surface states, and high series resistance. A good quantum efficiency of about 60% in the 0.72–1.24‐μm range has been obtained.Keywords
This publication has 8 references indexed in Scilit:
- Polycrystalline thin-film CuInSe2/CdZnS solar cellsIEEE Transactions on Electron Devices, 1984
- Large grain growth, morphological and electrical characterization of CuInSe2 sintered compoundsJournal of Crystal Growth, 1983
- Electro-Optical Properties of CuGa0.7In0.3Se2/ZnSe HeterojunctionPhysica Status Solidi (a), 1982
- Thin film heterojunction solar cellsMaterials Chemistry, 1979
- Spray-deposited high-efficiency SnO2/n-Si solar cellsApplied Physics Letters, 1979
- Growth and properties of vacuum deposited CuInSe2 thin filmsJournal of Vacuum Science and Technology, 1976
- CuInSe2/CdS heterojunction photovoltaic detectorsApplied Physics Letters, 1974
- Junction electroluminescence in CuInSe2Applied Physics Letters, 1974