Reaction of titanium with silicon nitride under rapid thermal annealing
- 10 November 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (19) , 1236-1238
- https://doi.org/10.1063/1.97424
Abstract
30–90 nm Ti films sputter deposited onto 50 nm Si3N4 have been rapid thermal annealed for 30 s in Ar and N2 ambients, and the phases formed identified using Auger electron spectroscopy, transmission electron microscopy, and electron diffraction. Reaction at 900 °C produces TiN surface and interfacial layers and an intermediate TiSi2 layer. The Ti-Si-N ternary phase diagram is used to explain the reaction sequence.Keywords
This publication has 5 references indexed in Scilit:
- A correlation of Auger electron spectroscopy, x‐ray photoelectron spectroscopy, and Rutherford backscattering spectrometry measurements on sputter‐deposited titanium nitride thin filmsJournal of Vacuum Science & Technology A, 1986
- Formation of TiN/TiSi2/p+-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titaniumIEEE Electron Device Letters, 1985
- Development of the self-aligned titanium silicide process for VLSI applicationsIEEE Transactions on Electron Devices, 1985
- Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in NitrogenMRS Proceedings, 1985
- Phase equilibria in thin-film metallizationsJournal of Vacuum Science & Technology B, 1984