X‐Ray, Photoluminescence, and SIMS Characterization of InGaAs / InP Grown by Vapor Phase Epitaxy
- 1 May 1987
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 134 (5) , 1247-1253
- https://doi.org/10.1149/1.2100651
Abstract
No abstract availableThis publication has 0 references indexed in Scilit: