Optical properties of intrinsic silicon at 300 K
- 9 January 1995
- journal article
- research article
- Published by Wiley in Progress In Photovoltaics
- Vol. 3 (3) , 189-192
- https://doi.org/10.1002/pip.4670030303
Abstract
An updated tabulation is presented of the optical properties of intrinsic silicon relevant to solar cell calculations. the absorption coeficient, refractive index and extinction coeficient at 300 K are tabulated over the 0.25‐1.45 μm wavelength range at 0.01 μm intervals.This publication has 12 references indexed in Scilit:
- Absorption edge of silicon from solar cell spectral response measurementsApplied Physics Letters, 1995
- Optical functions of silicon determined by two-channel polarization modulation ellipsometryOptical Materials, 1992
- Silicon (Si)Published by Elsevier ,1985
- Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by ellipsometryJournal of Applied Physics, 1982
- Temperature dependence of the optical properties of siliconJournal of Applied Physics, 1979
- Refractive indexes and temperature coefficients of germanium and siliconApplied Optics, 1976
- Refractive Index of SiliconApplied Optics, 1971
- Die Temperaturabhängigkeit des Brechungsindex von SiliziumCzechoslovak Journal of Physics, 1960
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958
- Infrared Refractive Indexes of Silicon Germanium and Modified Selenium Glass*Journal of the Optical Society of America, 1957